| PART |
Description |
Maker |
| 74LVXZ161284 74LVXZ161284MTX 74LVXZ161284MEX 74LVX |
2K, 258 X 8 or 128 X 16, SER EE, -40C to 85C, 8-TSSOP, TUBE
2K, 258 X 8 or 128 X 16, SER EE, -40C to 125C, 8-MSOP, T/R
BUS TRANSCEIVER|SINGLE|8-BIT|LVX-CMOS|SSOP|48PIN|PLASTIC
2K, 258 X 8 or 128 X 16, SER EE, -40C to 125C, 8-TSSOP, T/R
Low Voltage IEEE 161284 Translating Transceiver
|
Fairchild
|
| UPD705100GJ-100-8 UPD705100GJ-100-8EU |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
V830TM 32-BIT MICROCONTROLLER V830TM 32位微控制
|
NEC Corp.
NEC, Corp.
|
| M24256-B MM24256-BBN5T MM24256-BBN6T MM24256-BDL5T |
32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14
256/128 Kbit Serial I C Bus EEPROM With Three Chip Enable Lines 一百二十八分之二百五十六千位串行总线EEPROM，带有集成电路芯片启用三
HDWR ASSY ROD 2-4 MODULES SER 3
HDWR ASSY ROD 1 MODULES SER 3
HDWR NUT FASTENER SER 3 ROD ASSY
TOOL HAND NUT DRIVER FOR SER 3
256/128 Kbit Serial I2C Bus EEPROM With Three Chip Enable Lines
256/128 Kbit Serial I?C Bus EEPROM With Three Chip Enable Lines
256/128 Kbit Serial IC Bus EEPROM Without Chip Enable Lines
|
STMicroelectronics N.V.
EEPROM
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| UML6N |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
General purpose transistor (isolated transistor and diode)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| 6282-8110 6282-9024 6282-9012 6282-8230 6283-9012 |
Fan Controller/Driver with Factory-Programmed Temperature Thresholds
INDUSTRIERELAIS DPNO 24VDC
INDUSTRIERELAIS DPNO 230VAC
High-Accuracy PWM Output Temperature Sensors INDUSTRIERELAIS 3PNO 24Vdc
|
PRECI-DIP SA
|
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| IDT728981 IDT728981DB IDT728981P IDT728981J |
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 5.0V
TSI-TDM Switches
TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
|
IDT[Integrated Device Technology]
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory
128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
